Datasheet

BSS169
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance
C
iss
-5168pF
Output capacitance
C
oss
-913
Reverse transfer capacitance
C
rss
-47
Turn-on delay time
t
d(on)
- 2.9 4.2 ns
Rise time
t
r
- 2.7 4.0
Turn-off delay time
t
d(off)
-1117
Fall time
t
f
-2740
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.12 0.16 nC
Gate to drain charge
Q
gd
- 0.9 1.4
Gate charge total
Q
g
- 2.1 2.8
Gate plateau voltage
V
plateau
- -0.43 - V
Values
V
GS
=-10 V, V
DS
=25 V,
f =1 MHz
V
DD
=50 V,
V
GS
=-3…7 V,
I
D
=0.12 A, R
G
=6 Ω
V
DD
=80 V, I
D
=0.12 A,
V
GS
=-3 to 7 V
Rev. 1.8 page 3 ########
Reverse Diode
Diode continous forward current
I
S
- - 0.17 A
Diode pulse current
I
S,pulse
- - 0.68
Diode forward voltage
V
SD
V
GS
=-10 V, I
F
=0.17 A,
T
j
=25 °C
- 0.79 1.2 V
Reverse recovery time
t
rr
- 20.5 25.6 ns
Reverse recovery charge
Q
rr
- 9.7 12.1 nC
V
R
=50 V, I
F
=0.12 A,
di
F
/dt =100 A/µs
T
A
=25 °C
Rev. 1.8 page 3 ########