Datasheet

BSS169
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
R
thJA
minimal footprint - - 350 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-10 V, I
D
=250 µA
100 - - V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=50 µA
-2.9 -2.2 -1.8
Drain-source cutoff current
I
D(off)
V
DS
=100 V,
V
GS
=-10 V, T
j
=25 °C
- - 0.1 µA
V
DS
=100 V,
V
GS
=-10 V, T
j
=125 °C
--10
Values
Rev. 1.8 page 2 ########
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 10 nA
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=10 V
90 - - mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=0.05 A
- 5.3 12
Ω
V
GS
=10 V, I
D
=0.17 A
- 2.9 6
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.14 A
0.10 0.19 - S
Threshold voltage V
GS(th)
sorted in bands
2)
J
V
GS(th)
V
DS
=3 V, I
D
=50 µA
-2 - -1.8 V
K -2.15 - -1.95
L -2.3 - -2.1
M -2.45 - -2.25
N -2.6 - -2.4
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.8 page 2 ########