Datasheet

BSS139
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
R
thJA
minimal footprint - - 350 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=-3 V, I
D
=250 µA
250 - - V
Gate threshold voltage
V
GS(th)
V
DS
=3 V, I
D
=56 µA
-2.1 -1.4 -1
Drain-source cutoff current
I
D(off)
V
DS
=250 V,
V
GS
=-3 V, T
j
=25 °C
- - 0.1 µA
V
DS
=250 V,
V
GS
=-3 V, T
j
=125 °C
--10
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 10 nA
On-state drain current
I
DSS
V
GS
=0 V, V
DS
=10 V
30 - - mA
Drain-source on-state resistance
R
DS(on)
V
GS
=0 V, I
D
=15 mA
- 12.5 30
Ω
V
GS
=10 V,I
D
=0.1 mA
- 7.8 14
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.08 A
0.060 0.13 - S
Threshold voltage V
GS(th)
sorted in bands
2)
J
V
GS(th)
V
DS
=3 V, I
D
=56 µA
-1.2 - -1 V
K -1.35 - -1.15
L -1.5 - -1.3
M -1.65 - -1.45
N -1.8 - -1.6
2)
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1. 8 page 2 2009-08-18