Datasheet

BSS138N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.23 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
DS
=V
GS
; I
D
=26 µA
parameter: I
D
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Rev. 2.86 page 6 2012-04-17
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz; T
j
=25°C I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
0 102030
C [pF]
V
DS
[V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-3
10
-2
10
-1
10
0
00.40.81.21.622.4
I
F
[A]
V
SD
[V]
Rev. 2.86 page 6 2012-04-17