Datasheet

BSS123N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.19 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
DS
=V
GS
; I
D
=13 µA
parameter: I
D
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz; T
j
=25°C I
F
=f(V
SD
)
parameter: T
j
typ
98%
0
2
4
6
8
10
12
14
-60 -20 20 60 100 140 180
R
DS(on)
[W]
T
j
[°C]
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
0 10 20 30 40 50 60 70 80 90 100
C [pF]
V
DS
[V]
25 °C
150 °C
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
F
[A]
V
SD
[V]
25°C, 98%
typ
min
max
150°C, 98%
Rev 2.3 page 6 2012-11-21