Datasheet

BSS123N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 15.7 20.9 pF
Output capacitance
C
oss
- 3.4 4.5
Reverse transfer capacitance
C
rss
- 2.1 3.1
Turn-on delay time
t
d(on)
- 2.3 3.5 ns
Rise time
t
r
- 3.2 4.6
Turn-off delay time
t
d(off)
- 7.4 11.1
Fall time
t
f
- 22 33
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.04 0.06 nC
Gate to drain charge
Q
gd
- 0.23 0.35
Gate charge total
Q
g
- 0.6 0.9
Gate plateau voltage
V
plateau
- 2.5 - V
Reverse Diode
Diode continous forward current
I
S
- - 0.19 A
Diode pulse current
I
S,pulse
- - 0.77
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=0.19 A,
T
j
=25 °C
- 0.8 1.1 V
Reverse recovery time
t
rr
- 12 18 ns
Reverse recovery charge
Q
rr
- 4.3 6.5 nC
V
R
=50 V, I
F
=0.19 A,
di
F
/dt =100 A/µs
T
A
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=50 V, V
GS
=10 V,
I
D
=0.19 A, R
G,ext
=6 W
V
DD
=50 V, I
D
=0.19 A,
V
GS
=0 to 10 V
Rev 2.3 page 3 2012-11-21