Datasheet

BSS123N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient
R
thJA
minimal footprint
1)
- - 250 K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=250 µA
100 - - V
Gate threshold voltage
V
GS(th)
V
DS
=Vgs V, I
D
=13 µA
0.8 1.4 1.8
Drain-source leakage current
I
DSS
V
DS
=100 V, V
GS
=0 V,
T
j
=25 °C
- - 0.01
mA
V
DS
=100 V, V
GS
=0 V,
T
j
=150 °C
- - 5
Gate-source leakage current
I
GSS
V
GS
=20 V, V
DS
=0 V
- - 10 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=0.15 A
- 2.7 10
W
V
GS
=10 V, I
D
=0.19 A
- 2.4 6
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.15 A
0.41 - S
Values
1)
Performed on 40mm² FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both
sides of the PCB
Rev 2.3 page 2 2012-11-21