Datasheet

BSS123N
OptiMOS
™
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant, Halogen free
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.19 A
T
A
=70 °C
0.15
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.77
Avalanche energy, single pulse
E
AS
I
D
=0.19 A, R
GS
=25 W
2.0 mJ
Reverse diode dv /dt dv /dt
I
D
=0.19 A, V
DS
=80 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
1)
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
ESD Class
JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
0.5
PG-SOT23
3
1
2
Type
Package
Tape and Reel Information
Marking
Halogon Free
Packing
BSS123N
SOT23
H6327: 3000 pcs/ reel
SAs
Yes
Non dry
V
DS
100
V
R
DS(on),max
V
GS
=10 V
6
W
V
GS
=4.5 V
10
I
D
0.19
A
Product Summary
Rev 2.3 page 1 2012-11-21