Datasheet

BSP89
Rev. 2.1
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
³2*I
D
*R
DS(on)max
,
I
D
=0.28A
0.18 0.36 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 80 140 pF
Output capacitance C
oss
- 11.2 16.8
Reverse transfer capacitance C
rss
- 5.2 7.8
Turn-on delay time t
d
(
on
)
V
DD
=120V, V
GS
=10V,
I
D
=0.35A, R
G
=6W
- 4 6 ns
Rise time t
r
- 3.5 5.3
Turn-off delay time t
d
(
off
)
- 15.9 23.8
Fall time t
f
- 18.4 27.6
Gate Charge Characteristics
Gate to source charge
Q
g
s
V
DD
=192V, I
D
=0.35A - 0.2 0.3 nC
Gate to drain charge Q
g
d
- 2 3
Gate charge total Q
g
V
DD
=192V, I
D
=0.35A,
V
GS
=0 to 10V
- 4.3 6.4
Gate plateau voltage V
(p
lateau
)
V
DD
=192V, I
D
= 0.35 A - 3.1 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - 0.35 A
Inv. diode direct current, pulse
d
I
SM
- - 1.4
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.85 1.2 V
Reverse recovery time t
rr
V
R
=120V, I
F
=
l
S
,
di
F
/dt=100A/µs
- 67 100 ns
Reverse recovery charge Q
rr
- 123 184 nC
2009-08-18
Page 3