Datasheet

BSP75N
SOURCE
DRAININ
V
BB
R
L
PULSE
HITFET

BSP 75N
Data Sheet Rev. 1.4 8 2008-07-10
Figure 3 Test circuit for ISO pulse
Conducted Emissions
Acc. IEC 61967-4 (1Ω/150Ω method)
Typ. V
bb
Emissions at PWM-mode with
150Ω-matching network
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0,1 1 10 100 1000
f / MHz
dBµV
Noise level
BSP75N
150ohm Class6
150ohm Class1
150Ω / 8-H
150Ω / 13-N
150 Ω -Network
BSP75N
SOURCE
DRAININ
V
BB
R
L
Figure 4 Test circuit for conducted
emission
1)
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct
Power Injection)
Direct Power Injection: Forward Power
CW
Failure Criteria: Amplitude or frequency
variation max. 10% at OUT
Typ. V
bb
Susceptibility at DC-ON/OFF
and at PWM
0
5
10
15
20
25
30
35
40
1 10 100 1000
f / MHz
dBm
Limit
OUT, ON
OUT, OFF
OUT, PWM
HF
BSP75N
SOURCE
DRAININ
V
BB
R
L
B A N
Test circuit for conducted susceptibility
2)
1)
For defined de coupling and high reproducibility a
defined choke (5µH at 1MHz) is inserted in the
Vbb-Line.
2)
Broadband Artificial Network (short: BAN) consists
of the same choke (5µH at 1MHz) and the same
150
Ohm-matching network as for emission
measurement for defined de coupling and high
reproducibility.