Datasheet

HITFET

BSP 75N
Data Sheet Rev. 1.4 6 2008-07-10
Slew rate on 70 to 50% V
BB
: -dV
DS
/
d
t
on
– 5 10 V/
µs
R
L
= 22 Ω,
V
IN
= 0 to 10 V,
V
BB
= 12 V
Slew rate off 50 to 70% V
BB
: dV
DS
/
dt
off
– 10 15 V/
µs
R
L
= 22 Ω,
V
IN
= 10 to 0 V,
V
BB
= 12 V
Protection Functions
2)
Thermal overload trip
temperature
T
jt
150 165 180 °C –
Thermal hysteresis ∆ T
jt
– 10 – Κ –
Unclamped single pulse inductive
energy T
j
= 25 °C
T
j
= 150 °C
E
AS
550
200
–
–
–
–
mJ I
D(ISO)
= 0.7 A,
V
BB
= 32 V
Inverse Diode
Continuous source drain voltage V
SD
– 1 – V V
IN
= 0 V,
-I
D
= 2 × 0.7 A
1)
See also Figure 9.
2)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous, repetitive operation.
Electrical Characteristics (cont’d)
T
j
= 25 °C, unless otherwise specified
Parameter Sym-
bol
Limit Values Unit Test Conditions
min. typ. max.