Datasheet

Absolute Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit Remarks
Continuous drain source voltage
1)
See also Figure 7 and Figure 10.
1)
V
DS
60 V –
Drain source voltage for
short circuit protection
V
DS
36 V –
Continuous input voltage V
IN
-0.2 … +10 V –
Peak input voltage V
IN
-0.2 … +20 V –
Continuous Input Current
-0.2V ≤ V
IN
≤ 10V
V
IN
<-0.2V or V
IN
>10V
I
IN
no limit
| I
IN
|≤ 2mA
mA –
Operating temperature range
Storage temperature range
T
j
T
stg
-40 … +150
-55 … +150
°C
°C
–
Power dissipation (DC) P
tot
1.8 W –
Unclamped single pulse inductive energy E
AS
550 mJ I
D(ISO)
= 0.7 A;
V
bb
=32V
Load dump protection
2)
V
LoadDump
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.
2)
IN = low or high (8 V); R
L
= 50 Ω
IN = high (8 V); R
L
= 22 Ω
V
LoadDump
80
47
V V
LoadDump
=
V
P
+ V
S
;
V
P
= 13.5 V
R
3)
R
I
= internal resistance of the load dump test pulse generator LD200.
I
3)
= 2 Ω;
t
d
= 400 ms;
Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
V
ESD
4000 V –
Thermal Resistance
Junction soldering point R
thJS
≤ 10 K/W –
Junction - ambient
4)
Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm
2
copper area for pin 4 connection.
4)
R
thJA
≤ 70 K/W –
HITFET

BSP 75N
Data Sheet Rev. 1.4 4 2008-07-10