Datasheet

2011-10-041
BSP60-BSP62
1
2
3
4
PNP Silicon Darlington Transistor
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BSP50...BSP52 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BSP60
BSP61
BSP62
BSP60
BSP61
BSP62
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage
BSP60
BSP61
BSP62
V
CEO
45
60
80
V
Collector-base voltage
BSP60
BSP61
BSP62
V
CBO
60
80
90
Emitter-base voltage V
EBO
5
Collector current I
C
1 A
Peak collector current, t
p
≤ 10 ms I
CM
2
Base current I
B
100 mA
Total power dissipation-
T
S
≤ 124 °C
P
tot
1.5 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150