Datasheet

2008-03-27Rev.2.6 Page 7
BSP613P
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 2.9 A , V
DD
= -25 V, R
GS
= 25 Ω
25 45 65 85 105 125
ºC
165
T
j
0
20
40
60
80
100
120
mJ
160
E
AS
14 Typ. gate charge
V
GS
= f (Q
G
), parameter: V
DS
; T
j
= 25 °C
I
D
= 2.9 A pulsed;
0 4 8 12 16 20 24 28
nC
34
|Q
G
|
0
2
4
6
8
10
12
V
16
BSP613P
V
GS
0.2 V
DS max
0.8 V
DS max
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100
°C
180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSP613P
V
(BR)DSS