Datasheet

2008-03-27
Rev.2.6 Page 6
BSP613P
9 Drain-source on-state resistance
R
DS(on)
= f ( T
j
)
parameter :
I
D
= -2.9 A, V
GS
= -10 V
-60 -20 20 60 100
°C
180
T
j
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.34
BSP613P
R
DS(on)
typ
98%
10 Gate threshold voltage
V
GS(th)
= f ( T
j
)
parameter:
V
GS
= V
DS
, I
D
= -1 mA
-60 -20 20 60 100
°C
180
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
2%
-60 -20 20 60 100
°C
180
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
98%
-60 -20 20 60 100
°C
180
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th) typ
-60 -20 20 60 100
°C
180
T
j
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
V
-5.0
V
GS(th)
11 Typ. capacitances
C = f ( V
DS
)
parameter:
V
GS
=0V, f =1 MHz
0 -5 -10 -15 -20 -25 -30
V
-40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward characteristics of reverse diode
I
F
= f (V
SD
)
parameter:
T
j
, t
p = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
V
SD
-1
-10
0
-10
1
-10
2
-10
A
BSP613P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)