Datasheet

2008-03-27Rev.2.6 Page 3
BSP613P
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
I
D
=2.9A
2.7 5.4 - S
Input capacitance C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
- 715 875 pF
Output capacitance C
oss
- 230 295
Reverse transfer capacitance C
rss
- 90 120
Turn-on delay time t
d(on)
V
DD
=-30V, V
GS
=-10V,
I
D
=2.9A, R
G
=2.7Ω
- 6.7 17 ns
Rise time t
r
- 9 18
Turn-off delay time t
d(off)
- 26 52
Fall time t
f
- 7 19
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=-48V, I
D
=2.9A - 2.5 3.8 nC
Gate to drain charge Q
gd
- 8.9 14.3
Gate charge total Q
g
V
DD
=-48V, I
D
=2.9A,
V
GS
=0 to -10V
- 22 33
Gate plateau voltage V
(plateau)
V
DD
=-48V, I
D
=2.9A - -3.9 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - -2.9 A
Inv. diode direct current, pulsed I
SM
- - -11.6
Inverse diode forward voltage V
SD
V
GS
=0V, |I
F
| = |I
S
| - -0.8 -1.1 V
Reverse recovery time t
rr
V
R
=-30V, |I
F
| = |I
S
|,
di
F
/dt=100A/µs
- 37.2 79 ns
Reverse recovery charge Q
rr
- 59.8 112 nC