Datasheet

BSP 365
Semiconductor Group Page 3 05.03.96
Parameter and Conditions Symbol Values Unit
at T
j
= 25 °C, V
bb
= 24V unless otherwise specified
min typ max
Protection Functions
Current limit (pin 2 to 3)
5
)
T
j
= 25°C
T
j
= -40...+150°
I
L(SC)
0.2
0.2
0.5
--
1
1.2
A
Thermal overload trip temperature T
jt
150 -- -- °C
Thermal hysteresis ∆ T
jt
-- 10 -- K
Overvoltage protection T
j
=-40...+150°C V
bbin(AZ)
65 72 -- V
Output clamp (ind. load switch off)
at V OUT = V bb - V ON(CL)
V
ON(CL)
--
72
-- V
Inductive load switch-off energy dissipation
6
)
E
AS
-- -- 5mJ
Reverse battery resistor (pin 1 to 2) R
IN
-- 1--kΩ
Reverse Diode
Continious reverse drain current T
j
= 25°C I
S
-- -- 0.2 A
Pulsed reverse drain current T
j
= 25°C I
SM
-- -- 0.8 A
Diode forward on voltage
I
F
= 0.2 A, I
IN
= ≤ 0.05 mA
V
SD
-- 0.9 1.2 V
5
)
load current limits onset at I
L
* R
on
approx. 1V
short circuit protection: combination of current limit and thermal overload switch off
6
)
while demagnetizing load inductance, dissipated energy is E
AS
=
∫
(V
ON(CL)
* i
L
(t) dt,
approx.
E
AS
=
1
/
2
* L * I
2
L
* (
V
ON(CL)
V
ON(CL)
-V
bb
)