Datasheet

BSP 317
Data Sheet 7 05.99
Drain-source on-resistance
R
DS (on)
=
ƒ
( T
j
)
parameter:
I
D
= -0.37 A, V
GS
= -10 V
-60 -20 20 60 100 ˚C 160
T
j
0
2
4
6
8
10
12
14
Ω
18
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
ƒ
( T
j
)
parameter:
V
GS
= V
DS
, I
D
= -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Typ. capacitances
C = f ( V
DS
)
parameter:
V
GS
=0V, f = 1 MHz
0 -5 -10 -15 -20 -25 -30 V -40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
rss
C
oss
Forward characteristics of reverse diode
I
F
=
ƒ
( V
SD
)
parameter:
T
j
, t
p
= 80 µs
-2
-10
-1
-10
0
-10
1
-10
A
I
F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
V
SD
T
j
= 25 ˚C typ
T
j
= 25 ˚C (98%)
T
j
= 150 ˚C typ
T
j
= 150 ˚C (98%)