Datasheet

BSP 317
Data Sheet 2 05.99
Maximum Ratings
Parameter
Symbol Values Unit
Chip or operating temperature T
j
-55 ... + 150 ˚C
Storage temperature T
stg
-55 ... + 150
Thermal resistance, chip to ambient air R
thJA
≤ 70 K/W
Therminal resistance, junction-soldering point
1)
R
thJS
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics,
at T
j
= 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V, I
D
= -0.25 mA, T
j
= 25 ˚C
V
(BR)DSS
-200 - -
V
Gate threshold voltage
V
GS
=
V
DS,
I
D
= -1 mA
V
GS(th)
-0.8 -1.1 -2
Zero gate voltage drain current
V
DS
= -200 V, V
GS
= 0 V, T
j
= 25 ˚C
V
DS
= -200 V, V
GS
= 0 V, T
j
= 125 ˚C
V
DS
= -130 V, V
GS
= 0 V, T
j
= 25 ˚C
I
DSS
-
-
-
-
-10
-0.1
-100
-100
-1 µA
nA
Gate-source leakage current
V
GS
= -20 V, V
DS
= 0 V
I
GSS
- -10 -100
nA
Drain-Source on-state resistance
V
GS
= -10 V, I
D
= -0.37 A
R
DS(on)
- 3.4 6
Ω