Datasheet

1999-09-22
Page 8
BSP308
Preliminary data
Typ. gate charge
V
GS
= f ( Q
Gate
)
parameter: I
D
= 4.7 A pulsed
0 2 4 6 8 10 12 14 16 18
nC
21
Q
Gate
0
2
4
6
8
10
12
V
16
BSP308
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
= f ( T
j
)
-60 -20 20 60 100
°C
180
T
j
27
28
29
30
31
32
33
34
35
V
37
BSP308
V
(BR)DSS