Datasheet

1999-09-22
Page 7
BSP308
Preliminary data
Drain-source on-resistance
R
DS(on)
= f ( T
j
)
parameter : I
D
= 4.7 , V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
Ω
0.12
BSP308
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
= f ( T
j
)
parameter: V
GS
= V
DS
, I
D
= 20 µA
-60 -20 20 60 100
°C
180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
98%
-60 -20 20 60 100
°C
180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
typ
-60 -20 20 60 100
°C
180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
2%
-60 -20 20 60 100
°C
180
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
Typ. capacitances
C = f(V
DS
)
parameter: V
GS
=0 V, f =1 MHz
0 5 10 15 20 25 30
V
40
VDS
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP308
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)