Datasheet

1999-09-22
Page 6
BSP308
Preliminary data
Typ. drain-source-on-resistance
R
DS(on)
= f ( I
D
)
parameter: V
GS
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
A
8.5
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
Ω
0.16
BSP308
R
DS(on)
b
V
GS
[V] =
b
2.5
c
c
3.0
d
d
3.5
e
e
4.0
f
f
4.5
g
g
5.0
h
h
5.5
i
i
6.0
j
j
7.0
k
k
8.0
l
l
10.0
Typ. output characteristics
I
D
= f ( V
DS
)
parameter: t
p
= 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
DS
0
1
2
3
4
5
6
7
8
9
10
A
12
BSP308
I
D
V
GS
[V]
a
a 2.0
b
b 2.5
c
c 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 5.5
i
i 6.0
j
j 7.0
k
k 8.0
l
P
tot
= 1.80W
l 10.0
Typ. transfer characteristics I
D
= f ( V
GS
)
V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
GS
0
1
2
3
4
5
6
7
8
A
10
I
D
Typ. forward transconductance
g
fs
= f( I
D
); T
j
=25°C
parameter: g
fs
0 1 2 3 4 5 6 7
A
9
I
D
0
1
2
3
4
5
6
7
8
9
10
S
12
g
fs