Datasheet

Rev. 2.1
BSP296
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 1.1 A, V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
Ω
2.8
BSP296
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
;
I
D
=400µA
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0, f=1 MHz, T j = 25 °C
0 5 10 15 20
V
30
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-2
10
-1
10
0
10
1
10
A
BSP296
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2009-08-18
Page 6