Datasheet

Rev. 2.1
BSP296
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.88A
0.6 1.2 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 291 364 pF
Output capacitance C
oss
- 53 66
Reverse transfer capacitance C
rss
- 29 36
Turn-on delay time t
d(on)
V
DD
=50V, V
GS
=10V,
I
D
=1.1A, R
G
=6Ω
- 5.2 7.8 ns
Rise time t
r
- 7.9 11.8
Turn-off delay time t
d(off)
- 37.4 56.1
Fall time t
f
- 21.4 32.1
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=80V, I
D
=1.1A - 0.7 0.9 nC
Gate to drain charge Q
gd
- 5 7.5
Gate charge total Q
g
V
DD
=80V, I
D
=1.1A,
V
GS
=0 to 10V
- 13.8 17.2
Gate plateau voltage V
(plateau)
V
DD
=80V, I
D
= 1.1 A - 2.7 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - 1.1 A
Inv. diode direct current, pulsed
I
SM
- - 4.4
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.82 1.2 V
Reverse recovery time t
rr
V
R
=50V, I
F
=
l
S
,
di
F
/dt=100A/µs
- 44.3 55.4 ns
Reverse recovery charge Q
rr
- 71.9 89.8 nC
2009-08-18
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