Datasheet

BSP295
Rev 2.2
13 Typ. avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 3.9 A, V
DD
= 25 V, R
GS
= 25
20 40 60 80 100 120
°C
160
T
j
0
10
20
30
40
mJ
60
E
AS
14 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 1.8 A pulsed, T
j
= 25 °C
0 4 8 12 16
nC
24
Q
G
0
2
4
6
8
10
12
V
16
BSP295
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100
°C
180
T
j
45
46
47
48
49
50
51
52
53
54
55
56
57
V
60
BSP295
V
(BR)DSS
2011-08-24
Page 7