Datasheet

BSP295
Rev 2.2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=1.44A
0.8 1.7 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 295 368 pF
Output capacitance C
oss
- 95 118
Reverse transfer capacitance C
rss
- 45 67
Turn-on delay time t
d(on)
V
DD
=15V, V
GS
=4.5V,
I
D
=1.44 A, R
G
=15
- 5.4 8.1 ns
Rise time t
r
- 9.9 15
Turn-off delay time t
d(off)
- 27 41
Fall time t
f
- 19 28
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=24V, I
D
=1.8A - 0.9 1.1 nC
Gate to drain charge Q
gd
- 5.6 8.4
Gate charge total Q
g
V
DD
=24V, I
D
=1.8A,
V
GS
=0 to 10V
- 14 17
Gate plateau voltage V
(plateau)
V
DD
=24V, I
D
= 1.8 A - 3.1 3.8 V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - 1.8 A
Inv. diode direct current, pulsed
I
SM
- - 7.2
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.84 1.3 V
Reverse recovery time t
rr
V
R
=25V, I
F
=
l
S
,
di
F
/dt=100A/µs
- 36 45 ns
Reverse recovery charge Q
rr
- 38 48 nC
2011-08-24
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