Datasheet

BSP149
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
C
iss
- 326 430 pF
Output capacitance
C
oss
- 41 55
Reverse transfer capacitance
C
rss
- 17 25
Turn-on delay time
t
d(on)
- 5.1 7.7 ns
Rise time
t
r
- 3.4 5.1
Turn-off delay time
t
d(off)
- 45 68
Fall time
t
f
- 21 31
Gate Charge Characteristics
Gate to source charge
Q
gs
- 0.74 1.0 nC
Gate to drain charge
Q
gd
- 5.6 8.4
Gate charge total
Q
g
- 11 14
Gate plateau voltage
V
plateau
- 0.16 - V
Reverse Diode
Diode continous forward current
I
S
- - 0.66 A
Diode pulse current
I
S,pulse
- - 2.6
Diode forward voltage
V
SD
V
GS
=-3 V, I
F
=0.66 A,
T
j
=25 °C
- 0.9 1.2 V
Reverse recovery time
t
rr
- 42 65 ns
Reverse recovery charge
Q
rr
- 60 90 nC
V
R
=100 V, I
F
=0.5 A,
di
F
/dt =100 A/µs
T
A
=25 °C
Values
V
GS
=-3 V, V
DS
=25 V,
f =1 MHz
V
DD
=100 V,
V
GS
=-2…7 V,
I
D
=0.50 A, R
G
=6 W
V
DD
=160 V,
I
D
=0.05 A,
V
GS
=-3 to 5 V
Rev. 2.0 page 3 2012-05-18