Datasheet

BSP129
13 Forward characteristics of reverse diode 15 Typ. gate charge
I
F
=f(V
SD
) V
GS
=f(Q
gate
); I
D
=0.2 A pulsed
parameter: T
j
parameter: V
DD
16 Drain-source breakdown voltage
V
BR(DSS)
=f(T
j
); I
D
=250 µA
200
240
280
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-4
-3
-2
-1
0
1
2
3
4
5
6
0 1 2 3 4
V
GS
[V]
Q
gate
[nC]
25 °C
150 °C
0.01
0.1
1
10
0 0.5 1 1.5 2
I
F
[A]
V
SD
[V]
150 °C,
98%
Rev. 1.41
page 7
2012-03-20