Datasheet

BSP129
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.025 A; V
GS
=0 V V
GS(th)
=f(T
j
); V
DS
=3 V; I
D
=108 µA
parameter: I
D
11 Threshold voltage bands 12 Typ. capacitances
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C C =f(V
DS
); V
GS
=-3 V; f =1 MHz
108 µA
J
K
L
M
N
0.01
0.1
1
10
-2 -1.5 -1 -0.5
I
D
[mA]
V
GS
[V]
typ
98 %
0
10
20
30
40
-60 -20 20 60 100 140 180
R
DS(on)
[W]
T
j
[°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
0 10 20 30
C [pF]
V
DS
[V]
Rev. 1.41
page 6
2012-03-20