Datasheet

2007-03-27
1
BGX50A...
Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BGX50A
,
,
" !
, !
, "
Type Package Configuration Marking
BGX50A SOT143 bridge U1s
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Diode reverse voltage V
R
50 V
Peak reverse voltage V
RM
70
Forward current I
F
140 mA
Non-repetitive peak surge forward current I
FSM
-
Total power dissipation
T
S
74°C
P
tot
210 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
2)
BGX50A
R
thJS
360
K/W
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance

Summary of content (6 pages)