Datasheet

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BFS480

1 Jun-27-2001

NPN Silicon RF Transistor

For low noise, low-power amplifiersin mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2 mA to 8

= 7 GHz

F = 1.5 dB at 900 MHz

Two (galvanic) internal isolated

Transistors in one package

VPS05604

EHA07196

6 54

321

C1 E2 B2

C2E1B1

TR1

TR2

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFS480 REs 1=B 2=E 3=C 4=B 5=E 6=C

SOT363

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

CEO

8 V

Collector-emitter voltage

CES

Collector-base voltage

CBO

Emitter-base voltage

EBO

Collector current

10 mA

Base current

1.2

Total power dissipation

112 °C

tot

80 mW

Junction temperature

150 °C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Junction - soldering point

thJS

470

K/W

is measured on the collector lead at the soldering point to the pcb

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Summary of content (6 pages)

PAGE 1
BFS480 NPN Silicon RF Transistor 4 For low noise, low-power amplifiersin mobile 5 6 communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz 2 F = 1.
PAGE 2
BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max.
PAGE 3
BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7.5 - Ccb - 0.23 0.4 Cce - 0.1 - Ceb - 0.23 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 1.
PAGE 4
BFS480 Total power dissipation Ptot = f (TS ) 100 mW P tot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.
PAGE 5
BFS480 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 10 0.40 GHz pF 8 5V 7 3V fT Ccb 0.30 10V 0.25 2V 6 0.20 5 0.15 1V 4 0.7V 0.10 3 0.05 0.00 0 2 2 4 6 8 V 1 0 12 2 4 6 8 mA VCB 12 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 15 22 dB dB 8V 2V 8V 13 3V 18 G G 12 16 1V 2V 11 10 14 1V 9 0.7V 8 12 0.
PAGE 6
BFS480 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 20 22 IC=3mA 0.9GHz dB dBm 16 14 0.9GHz 3V 2V 1.8GHz IP 3 G 14 8V 5V 12 10 6 1.