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2010-08-09

BFR93AW

NPN Silicon RF Transistor

• For low distortion amplifiers and

oscillators up to 2 GHz at collector currents from

5 mA to 30 mA

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR93AW R2s

1=B 2=E 3=C

SOT323

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V

CEO

12 V

Collector-emitter voltage V

CES

Collector-base voltage V

CBO

Emitter-base voltage V

EBO

Collector current I

90 mA

Base current I

Total power dissipation

≤ 104 °C

tot

300 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature T

Stg

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

thJS

≤ 155

K/W

is measured on the collector lead at the soldering point to the pcb

For calculation of R

thJA

please refer to Application Note AN077 Thermal Resistance

Summary of content (8 pages)

PAGE 1
BFR93AW NPN Silicon RF Transistor • For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 3 2 1 5 mA to 30 mA • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR93AW Marking R2s 1=B Pin Configuration 2=E 3=C Package SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VC
PAGE 2
BFR93AW Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max.
PAGE 3
BFR93AW Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 4.5 6 - Ccb - 0.58 0.8 Cce - 0.3 - Ceb - 1.9 - GHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.
PAGE 4
BFR93AW Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 3 400 mW K/W RthJS Ptot 300 250 10 2 200 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 100 50 0 0 20 40 60 80 100 120 °C 10 0 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) Ptotmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 5
BFR93AW SPICE Parameter For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design.
PAGE 6
Package SOT323 BFR93AW Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.
PAGE 7
BFR93AW Datasheet Revision History: 9 August 2010 This datasheet replaces the revision from 26 April 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated.
PAGE 8
BFR93AW Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.