Datasheet

2012-06-25
1
BFR93A
1
2
3
NPN Silicon RF Transistor
• For low-noise, high gain broadband amplifiers at
collector currents from 2 mA to 30 mA
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR93A R2s
1=B 2=E 3=C
SOT23
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
90 mA
Base current I
B
9
Total power dissipation
1)
T
S
≤ 106 °C
P
tot
300 mW
Junction temperature T
J
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
St
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
2)
R
thJS
≤ 145
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
2
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)