Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsN/A BFR 181 W NPN BFR 181 W NPN

2010-10-08

BFR181W

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

• f

= 8 GHz, NF

min

= 0.9 dB at 900 MHz

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR181W RFs

1=B 2=E 3=C

SOT323

Maximum Ratings at T

= 25 °C

Parameter Symbol Value Unit

Collector-emitter voltage V

CEO

12 V

Collector-emitter voltage V

CES

Collector-base voltage V

CBO

Emitter-base voltage V

EBO

Collector current I

20 mA

Base current I

Total power dissipation

≤ 90 °C

tot

175 mW

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

thJS

≤ 345

K/W

is measured on the collector lead at the soldering point to the pcb

For calculation of R

thJA

please refer to Application Note AN077 Thermal Resistance

Summary of content (6 pages)

PAGE 1
BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 3 2 1 • fT = 8 GHz, NFmin = 0.
PAGE 2
BFR181W Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max.
PAGE 3
BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.29 0.45 Cce - 0.22 - Ceb - 0.35 - AC Characteristics (verified by random sampling) Transition frequency GHz IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.
PAGE 4
BFR181W Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 200 mW 160 K/W RthJS Ptot 140 120 10 2 100 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 80 60 40 20 0 0 20 40 60 80 100 120 °C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) P totmax/PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 5
Package SOT323 BFR181W Package Outline 0.9 ±0.1 2 ±0.2 0.3 +0.1 -0.05 0.1 MAX. 3x 0.1 M 0.1 A 1 2 1.25 ±0.1 0.1 MIN. 2.1 ±0.1 3 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 0.8 1.6 0.6 0.65 0.65 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BCR108W Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.
PAGE 6
BFR181W Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.