Datasheet

2010-03-12
1
BFQ19S
1
2
2
3
NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG
1 = B 2 = C 3 = E
SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
15 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
3
Collector current I
C
210 mA
Base current I
B
21
Total power dissipation
2)
T
S
≤ 85°C
P
tot
1 W
Junction temperature T
j
150 °C
Operation junction temperature range T
j
o
- ... - -
Ambient temperature T
A
-65 ... 150
°C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 65
K/W
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance