Datasheet

2009-12-02
BFP420
1
1
2
3
4
NPN Silicon RF Transistor
• For high gain low noise amplifiers
• For oscillators up to 10 GHz
• Noise figure F = 1.1 dB at 1.8 GHz
outstanding G
ms
= 21 dB at 1.8 GHz
• Transition frequency f
T
= 25 GHz
• Gold metallization for high reliability
• SIEGET  25 GHz fT - Line
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP420 AMs
1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
T
A
> 0 °C
T
A
≤ 0 °C
V
CEO
4.5
4.1
V
Collector-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
1.5
Collector current I
C
35 mA
Base current I
B
3
Total power dissipation
2)
T
S
≤ 107 °C
P
tot
160 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
st
g
-65 ... 150
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb