Datasheet

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2011-12-19

BFN27

PNP Silicon High-Voltage Transistors

• Suitable for video output stages in TV sets

and switching power supplies

• High breakdown voltage

• Low collector-emitter saturation voltage

• Complementary types: BFN26 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BFN27 FLs

1=B 2=E 3=C

SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

300 V

Collector-base voltage V

CBO

300

Emitter-base voltage V

EBO

Collector current I

200 mA

Peak collector current, t

≤ 10 ms I

500

Base current I

100

Peak base current I

200

Total power dissipation-

≤ 74 °C

tot

360 mW

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

thJS

≤ 210

K/W

For calculation of R

thJA

please refer to Application Note AN077 (Thermal Resistance Calculation)

Summary of content (7 pages)

PAGE 1
BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking BFN27 FLs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base volt
PAGE 2
BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 5 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 250 V, IE = 0 - - 0.
PAGE 3
BFN27 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range IC = ƒ(VCEO) TA = 25°C, D = 0 BFN 25/27 10 3 EHP00634 mA 5 10 µs h FE 10 2 IC 10 2 100 µs 5 10 1 1 ms DC 10 1 10 0 5 10 0 -1 10 5 10 0 5 10 1 2 5 10 ΙC mA 10 Collector current IC = ƒ(VBE ) BFN 25/27 10 1 10 2 V 10 3 VCE Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V VCE = 10V 10 3 10 -1 0 10 3 EHP00632 mA Ι CBO ΙC 10 4 nA BFN 25/27 EHP00633 max 10 3 5 10 2 5 10 2 5 10 1 5 typ 10 1 5 10
PAGE 4
BFN27 Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) BFN 25/27 EHP00629 90 pF MHz CCB(CEB ) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 Permissible Pulse Load RthJS = ƒ(tp) 10 3 400 K/W mW 10 2 RthJS Ptot 300 250 10 1 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.
PAGE 5
BFN27 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 10 3 BFN 25/27 Ptot max 5 Ptot DC EHP00630 tp D= T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 6
Package SOT23 BFN27 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.
PAGE 7
BFN27 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.