Datasheet

2007-04-20
4
BF998...
Total power dissipation P
tot
= ƒ(T
S
)
BF998, BF998R
0 15 30 45 60 75 90 105 120
°C
150
T
S
0
20
40
60
80
100
120
140
160
180
mW
220
P
tot
Output characteristics I
D
= ƒ(V
DS
)
V
G2S
= 4 V
V
G1S
= Parameter
0 2 4 6 8 10
V
14
V
DS
0
2
4
6
8
10
12
14
16
18
20
22
mA
26
I
D
0.4V
0.2V
0V
-0.2V
-0.4V
Gate 1 forward transconductance
g
fs
= ƒ(I
D
)
V
DS
= 5V, V
G2S
= Parameter
0 4 8 12 16
mA
24
I
D
0
2
4
6
8
10
12
14
16
18
20
22
mS
26
g
fs
4V
2V
1V
0V
Gate 1 forward transconductance
g
fs1
= ƒ (V
G1S
)
-1 -0.75 -0.5 -0.25 0 0.25
V
0.75
V
G1S
0
2
4
6
8
10
12
14
16
18
20
22
mS
26
G
fs
4V
2V
1V
0V