Datasheet
2011-10-053
BDP947_BDP949_BDP953
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BDP947
I
C
= 10 mA, I
B
= 0 , BDP949
I
C
= 10 mA, I
B
= 0 , BDP953
V
(BR)CEO
45
60
100
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 µA, I
E
= 0 , BDP947
I
C
= 100 µA, I
E
= 0 , BDP949
I
C
= 0 , I
E
= 100 µA, BDP953
V
(BR)CBO
45
60
120
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5 - -
Collector-base cutoff current
V
CB
= 45 V, I
E
= 0
V
CB
= 45 V, I
E
= 0 , T
A
= 150 °C
I
CBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
- - 100 nA
DC current gain
2)
I
C
= 10 mA, V
CE
= 5 V
I
C
= 500 mA, V
CE
= 1 V
I
C
= 2 A, V
CE
= 2 V, BDP947, BDP949
I
C
= 2 A, V
CE
= 2 V, BDP953
h
FE
25
100
50
15
-
-
-
-
-
475
-
-
-
Collector-emitter saturation voltage
2)
I
C
= 2 A, I
B
= 0.2 A
V
CEsat
- - 0.5 V
Base emitter saturation voltage
2)
I
C
= 2 A, I
B
= 0.2 A
V
BEsat
- - 1.3
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 10 V, f = 100 MHz
f
T
- 100 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 25 - pF
1
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse test: t < 300µs; D < 2%