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2011-10-051

BDP947_BDP949_BDP953

Silicon NPN Transistors

• For AF driver and output stages

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary types: BDP948, BDP950,

BDP954 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BDP947

BDP949

BDP953

BDP947

BDP949

BDP953

1=B

2=C

3=E

4=C

SOT223

Summary of content (8 pages)

PAGE 1
BDP947_BDP949_BDP953 Silicon NPN Transistors • For AF driver and output stages 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BDP948, BDP950, BDP954 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223 BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223 BDP953 BDP953 1=B 2=C 3=E 4=C - - SOT223 1 Package 2011-10-05
PAGE 2
BDP947_BDP949_BDP953 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BDP947 45 BDP949 60 BDP953 100 Collector-base voltage Unit VCBO BDP947 45 BDP949 60 BDP953 120 Emitter-base voltage VEBO 5 Collector current IC 3 Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 Peak base current, tp ≤ 10 ms IBM 500 Total power dissipation- Ptot 5 W 150 °C A mA TS ≤ 100 °C Junction temperature Tj Storage temperature Tstg -65 ...
PAGE 3
BDP947_BDP949_BDP953 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max.
PAGE 4
BDP947_BDP949_BDP953 DC current gain hFE = ƒ(IC) VCE = 2 V Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 10 4 10 3 mA 100°C - 25°C 10 3 -55°C IC hFE 10 2 100°C 25°C -50°C 10 2 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA 10 10 0 0 4 0.1 0.2 0.3 V 0.4 IC Base-emitter saturation voltage Collector current IC = ƒ(VBE) IC = (VBEsat), hFE = 10 VCE = 2 V 10 4 10 4 mA mA 10 3 IC -50°C 25°C 100°C -50°C 25°C 100°C IC 10 3 10 2 10 2 10 1 10 1 10 0 0 0.
PAGE 5
BDP947_BDP949_BDP953 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 10 5 nA 500 pF CCB(CEB ) ICB0 10 4 10 3 max 10 2 400 350 300 250 CEB 200 10 1 150 typ 100 10 0 50 10 -1 0 CCB 20 40 60 80 100 120 °C 0 0 150 4 8 12 16 TA V 22 VCB(VEB Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 2 5.5 W 4.5 RthJS Ptot 4 3.
PAGE 6
BDP947_BDP949_BDP953 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Ptotmax/PtotDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 7
Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BDP947_BDP949_BDP953 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.
PAGE 8
BDP947_BDP949_BDP953 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.