Datasheet

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2007-04-20

BCW60, BCX70

NPN Silicon AF Transistors

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BCW61, BCX71 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCW60B

BCW60C

BCW60D

BCW60FF

BCX70G

BCX70H

BCX70J

BCX70K

ABs

ACs

ADs

AFs

AGs

AHs

AJs

AKs

1=B

2=E

3=C

SOT23

Pb-containing package may be available upon special request

Summary of content (11 pages)

PAGE 1
BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking BCW60B ABs 1=B 2=E 3=C SOT23 BCW60C ACs 1=B 2=E 3=C SOT23 BCW60D ADs 1=B 2=E 3=C SOT23 BCW60FF AFs 1=B 2=E 3=C SOT23 BCX70G AGs 1=B 2=E 3=C SOT23 BCX70H AHs
PAGE 2
BCW60, BCX70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCW60, ...60FF 32 BCX70 45 Collector-base voltage Unit VCBO BCW60, ...
PAGE 3
BCW60, BCX70 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCW60, ...60FF 32 - - IC = 10 mA, IB = 0 , BCX70 45 - - IC = 10 µA, IE = 0 , BCW60, ...
PAGE 4
BCW60, BCX70 DC Electrical Characteristics Parameter Symbol Values min. typ. Unit max. Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 10 mA, IB = 0.25 mA - 0.12 0.25 IC = 50 mA, IB = 1.25 mA - 0.2 0.55 IC = 10 mA, IB = 0.25 mA - 0.7 0.85 IC = 50 mA, IB = 1.25 mA - 0.83 1.05 IC = 10 µA, VCE = 5 V - 0.52 - IC = 2 mA, VCE = 5 V 0.58 0.65 0.7 IC = 50 mA, VCE = 1 V - 0.
PAGE 5
BCW60, BCX70 AC Characteristics Transition frequency fT - 250 - MHz IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 0.95 - pF Ceb - 9 - VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. G - 2.7 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. B/ H - 3.6 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp. C/ J /FF - 4.5 - IC = 2 mA, VCE = 5 V, f = 1 kHz, h FE-grp.
PAGE 6
BCW60, BCX70 DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat), hFE = 10 10 3 h FE BCW 60/BCX 70 5 EHP00334 10 2 ΙC 100 ˚C BCW 60/BCX 70 EHP00332 mA 100 ˚C 25 ˚C -50 ˚C 25 ˚C -50 ˚C 10 2 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 10 -1 10 0 10 1 10 -1 0 mA 10 2 0.1 0.2 0.3 ΙC Collector current I C = ƒ(V BE) IC = ƒ(V BEsat), hFE = 40 VCE = 5V ΙC BCW 60/BCX 70 EHP00331 mA 10 2 ΙC 100 ˚C 25 ˚C -50 ˚C 10 1 V 0.
PAGE 7
BCW60, BCX70 Collector cutoff current ICBO = ƒ(TA) Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz VCB = V CEmax BCW 60/BCX 70 10 4 nA EHP00335 10 3 BCW 60/BCX 70 EHP00330 MHz Ι CBO fT 10 3 max 10 2 10 2 10 1 5 typ 10 0 10 -1 0 50 100 10 1 10 -1 150 ˚C 10 0 10 1 10 2 ΙC TA Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) Total power dissipation Ptot = ƒ(TS) 12 360 mW pF 10 300 9 270 8 240 Ptot CCB(CEB ) mA 7 210 6 1
PAGE 8
BCW60, BCX70 h parameter he = ƒ(IC) normalized VCE = 5V Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 BCW 60/BCX 70 EHP00328 Ptot max 5 Ptot DC D= tp T 10 2 tp he BCW 60/BCX 70 EHP00336 5 T h 11e 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 VCE = 5 V 1 5 h 12e 10 0 h 21e 5 5 h 22e 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 -1 10 -1 10 0 5 10 0 ΙC tp h parameter he = ƒ(VCE ) normalized Noise figure F = ƒ(VCE) IC = 2mA IC = 0.2mA, R S = 2kΩ , f = 1kHz 2.
PAGE 9
BCW60, BCX70 Noise figure F = ƒ(f) Noise figure F = ƒ(I C) VCE = 5V, f = 120Hz VCE = 5V, ZS = ZSopt 20 F BCW 60/BCX 70 EHP00339 dB 20 F BCW 60/BCX 70 EHP00340 dB 15 15 10 10 RS = 1 MΩ 100 k Ω 10 k Ω 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 10 -2 10 -1 Noise figure F = ƒ(IC ) Noise figure F = ƒ(I C) VCE = 5V, f = 10kHz VCE = 5V, f = 1kHz F BCW 60/BCX 70 EHP00341 dB 20 F 15 R S = 1 MΩ BCW 60/BCX 70 EHP00342 dB RS = 1 M Ω 15 100 kΩ 10 kΩ 100 k Ω 10 1
PAGE 10
Package SOT23 BCW60, BCX70 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.
PAGE 11
BCW60, BCX70 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).