Datasheet

2011-10-05
1
BCX69...
1
2
2
3
PNP Silicon AF Transistors
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCX69-10
BCX69-16
BCX69-25
CF
CG
CH
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
CEO
20 V
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
5
Collector current I
C
1 A
Peak collector current, t
p
≤ 10 ms I
CM
2
Base current I
B
100 mA
Peak base current I
BM
200
Total power dissipation-
T
S
= 114 °C
P
tot
3 W
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Parameter
Symbol Value Unit
Junction - soldering point
1)
R
thJS
≤ 12
K/W
1
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)