Datasheet

Semiconductor Group 2
BCX 68
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 30 mA
V
(BR)CE0 20 – –
Collector-base breakdown voltage
I
C = 10 µA
V
(BR)CB0 25 – –
–
DC current gain
1)
I
C = 5 mA, VCE = 10 V
I
C = 500 mA, VCE = 1 V
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
I
C = 1 A, VCE = 1 V
hFE
50
85
85
100
160
60
–
–
100
160
250
–
–
375
160
250
375
–
MHzTransition frequency
I
C = 100 mA, VCE = 5 V, f = 20 MHz
f
T – 100 –
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E = 1 µA
V
(BR)EB0 5––
nA
µA
Collector cutoff current
V
CB = 25 V
V
CB = 25 V, TA = 150 ˚C
I
CB0
–
–
–
–
100
100
µAEmitter cutoff current
V
EB = 5 V
I
EB0 ––10
V
Collector-emitter saturation voltage
1)
I
C = 1 A, IB = 100 mA
VCEsat – – 0.5
Base-emitter voltage
1)
I
C = 5 mA, VCE = 10 V
I
C = 1 A, VCE = 1 V
V
BE
–
–
0.6
–
–
1
1)
Pulse test: t ≤ 300 µs, D = 2 %.