Datasheet

Semiconductor Group 1
NPN Silicon AF Transistors BCX 68
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
–
CB
CC
CD
SOT-89
1 2 3
B C E
Junction - ambient
2)
Rth JA ≤ 75 K/W
Junction - soldering point
R
th JS ≤ 20
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 20 V
Peak collector current ICM 2
Base current I
B 100 mA
Collector current I
C 1A
Junction temperature Tj 150 ˚C
Total power dissipation, T
S = 130 ˚C Ptot 1W
Storage temperature range T
stg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Emitter-base voltage VEB0 5
Peak base current IBM 200
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
● For general AF applications
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: BCX 69 (PNP)
5.91