Datasheet

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2011-10-04

BCX42

PNP Silicon AF and Switching Transistor

• For general AF applications

• High breakdown voltage

• Low collector-emitter saturation voltage

• Complementary type: BCX41 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCX42 DKs

1 = B 2 = E 3 = C

SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

125 V

Collector-base voltage V

CBO

125

Emitter-base voltage V

EBO

Collector current I

800 mA

Peak collector current, t

≤ 10 ms I

1 A

Base current I

100 mA

Peak base current I

200

Total power dissipation

≤ 79 °C

tot

330 mW

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point

thJS

≤ 215

K/W

For calculation of R

thJA

please refer to Application Note AN077 (Thermal Resistance Calculation)

Summary of content (7 pages)

PAGE 1
BCX42 PNP Silicon AF and Switching Transistor • For general AF applications 2 3 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BCX41 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type BCX42 Marking DKs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 125 Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC Peak collector
PAGE 2
BCX42 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 Unit V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - V(BR)EBO 5 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 100 V, IE = 0 - - 0.
PAGE 3
BCX42 DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 BCX 42/BSS 63 EHP00435 3 BCX 42/BSS 63 10 EHP00433 mA h FE 5 150 ˚C 25 ˚C -50 ˚C ΙC 2 10 150 ˚C 25 ˚C 5 -50 ˚C 10 2 1 10 5 5 0 10 5 10 1 10 -1 5 10 0 5 10 1 5 10 2 10 -1 mA 10 3 0 200 400 600 mV 800 ΙC VCE sat Base-emitter saturation voltage Collector current IC = ƒ(VBE ) IC = ƒ(VBEsat), hFE = 10 VCE = 1V 10 3 BCX 42/BSS 63 EHP00432 10 3 mA BCX 42/BSS 63 E
PAGE 4
BCX42 Collector cutoff current ICBO = ƒ(TA) VCBO = 100 V BCX 42/BSS 63 10 4 nA Ι CB0 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz EHP00434 10 3 BCX 42/BSS 63 EHP00431 MHz max 10 3 fT 5 5 10 2 5 10 2 typ 10 1 5 10 5 0 5 10 -1 0 50 100 10 1 10 0 150 ˚C 5 10 1 5 10 2 mA 10 3 ΙC TA Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation P tot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 400 90 mW 70 300 60 Ptot CCB(CEB ) pF 250 50 200 40 1
PAGE 5
BCX42 Total power dissipation P tot = ƒ(TS) 10 3 BCX 42/BSS 63 Ptot max 5 Ptot DC EHP00430 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 6
Package SOT23 BCX42 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.
PAGE 7
BCX42 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.