Datasheet

2011-10-13
3
BCV61
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
I
E
= 10 µA
I
E
= 250 mA
V
BES
0.4
-
-
-
-
1.8
V
Matching of transistor T1 and transistor T2
at I
E2
= 0.5mA and V
CE1
= 5V
T
A
= 25 °C
T
A
= 150 °C
I
C1
/ I
C2
-
0.7
0.7
-
-
-
-
1.3
1.3
-
Thermal coupling of transistor T1 and
transistor T2
1)
T1: V
CE
= 5V
Maximum current of thermal stability of I
C1
I
E2
- 5 - mA
AC characteristics for transistor T1
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 250 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 0.95 - pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
- 9 -
Noise figure
I
C
= 200 µA, V
CE
= 5 V, R
S
= 2 k,
f = 1 kHz, f = 200 Hz
F
- 2 - dB
Short-circuit input impedance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
11e
- 4.5 -
k
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
12e
- 2 -
10
-4
Short-circuit forward current transf.ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
21e
100 - 900
-
Open-circuit output admittance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
22e
- 30 -
µS
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm