Datasheet
2011-10-13
1
BCV61
NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and V
BE
matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
2
3
4
EHA00012
C2 (1)
Tr.2Tr.1
C1 (2)
E1 (3) E2 (4)
Type Marking Pin Configuration Package
BCV61B
BCV61C
1Ks
1Ls
1 = C2
1 = C2
2 = C1
2 = C1
3 = E1
3 = E1
4 = E2
4 = E2
SOT143
SOT143
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage
(transistor T1)
V
CEO
30 V
Collector-base voltage (open emitter)
(transistor T1)
V
CBO
30
Emitter-base voltage V
EBS
6
DC collector current I
C
100 mA
Peak collector current, t
p
< 10 ms I
CM
200
Base peak current (transistor T1) I
BM
200
Total power dissipation, T
S
= 99 °C P
tot
300 mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤170 K/W
1
For calculation of R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)