Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsN/A NPN Case type SOT 89 NPN Case type SOT 89

2011-10-05

BCV29, BCV49

NPN Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV28, BCV48 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCV29

BCV49

1=B

2=C

3=E

SOT89

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

BCV29

BCV49

CEO

Collector-base voltage

BCV29

BCV49

CBO

Emitter-base voltage V

EBO

Collector current I

500 mA

Peak collector current, t

≤ 10 ms I

800

Base current I

100

Peak base current I

200

Total power dissipation-

≤ 130 °C

tot

1 W

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Summary of content (7 pages)

PAGE 1
BCV29, BCV49 NPN Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV28, BCV48 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E SOT89 BCV49 EG 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV29 30 BCV49 60 Collector-base voltage Unit VCBO BCV29 40 BCV49 80
PAGE 2
BCV29, BCV49 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 20 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max.
PAGE 3
BCV29, BCV49 1Pulse test: t < 300µs; D < 2% Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.
PAGE 4
BCV29, BCV49 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 1000 BCV 29/49 EHP00325 5 10 3 ΙC EHP00322 mA 125 ˚C 10 5 BCV 29/49 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 V ΙC V CEsat Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 1000 10 3 ΙC BCV 29/49 1.
PAGE 5
BCV29, BCV49 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 29/49 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00321 19 pF MHz CCB/CEB fT 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 10 1 10 2 mA 1 0 10 3 4 8 12 16 V 22 VCB/VEB ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 1200 5 BCV 29/49 Ptot max Ptot DC mW D= Ptot tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 6
Package SOT89 BCV29, BCV49 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.
PAGE 7
BCV29, BCV49 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.