Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsN/A PNP PNP

2011-10-05

BCV26, BCV46

PNP Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV27, BCV47 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCV26

BCV46

FDs

FEs

1=B

2=E

3=C

SOT23

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

BCV26

BCV46

CEO

Collector-base voltage

BCV26

BCV46

CBO

Emitter-base voltage V

EBO

Collector current I

500 mA

Peak collector current, t

≤ 10 ms I

800

Base current I

100

Peak base current I

200

Total power dissipation-

≤ 74 °C

tot

360 mW

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Summary of content (7 pages)

PAGE 1
BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications 2 3 • High collector current 1 • High current gain • Complementary types: BCV27, BCV47 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80
PAGE 2
BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max.
PAGE 3
BCV26, BCV46 1Pulse test: t < 300µs; D < 2% Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 4.
PAGE 4
BCV26, BCV46 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 1000 BCV 26/46 EHP00298 5 10 3 ΙC 125 ˚C 10 5 BCV 26/46 EHP00296 mA 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 10 0 mA 10 3 0 0.5 1.0 ΙC Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax IC = ƒ(VBEsat), hFE = 1000 ΙC BCV 26/46 1.
PAGE 5
BCV26, BCV46 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 26/46 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00294 16 pF MHz CCB(CEB ) fT 10 2 12 10 8 CEB 6 5 4 CCB 2 10 1 10 0 10 1 10 2 mA 0 0 10 3 4 8 12 16 V 22 VCB(VEB ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 400 10 3 BCV 26/46 Ptot max 5 Ptot DC mW EHP00292 tp D= T T 300 Ptot tp 10 2 250 D= 0 0.005 0.01 0.02 0.05 0.1 0.
PAGE 6
Package SOT23 BCV26, BCV46 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.
PAGE 7
BCV26, BCV46 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.