Datasheet

2011-07-28
2
BCR48PN
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 140 K/W
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics for NPN Type
Collector-emitter breakdown voltage
I
C
= 100 µA, I
B
= 0
V
(BR)CEO
50 - - V
Collector-base breakdown voltage
I
C
= 10 µA, I
E
= 0
V
(BR)CBO
50 - -
Collector cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
- - 100 nA
Emitter cutoff current
V
EB
= 10 V, I
C
= 0
I
EBO
- - 164 µA
DC current gain 2)
I
C
= 5 mA, V
CE
= 5 V
h
FE
70 - -
-
Collector-emitter saturation voltage2)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
- - 0.3 V
Input off voltage
I
C
= 100 µA, V
CE
= 5 V
V
i(off)
0.8 - 1.5
Input on Voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
1 - 3
Input resistor R
1
32 47 62
kΩ
Resistor ratio R
1
/R
2
0.9 1 1.1
-
AC Characteristics for NPN Type
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
- 100 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 3 - pF
1
For calculation of
R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
2) Pulse test: t < 300
µs; D < 2%